GeneSiC Semiconductor Gets US $1.5M from DOE

The U.S. Department of Energy (DOE) has awarded GeneSiC Semiconductor two separate grants totaling US $1.5 million for the development of high-voltage silicon carbide (SiC) devices that could serve as key enablers for wind- and solar-power integration with the nation’s electricity grid.

“These awards demonstrate the DOE’s confidence in GeneSiC’s capabilities, as well as its commitment to alternative energy solutions,” said Dr. Ranbir Singh, president of GeneSiC. “An integrated, efficient power grid is critical to the nation’s energy future — and the SiC devices we’re developing are critical for overcoming the inefficiencies of conventional silicon technologies.”

The first award is a US $750k Phase II SBIR grant for the development of fast, ultra-high-voltage SiC bipolar devices. The second is a US $750k Phase II STTR grant for the development of optically gated high-power SiC switches.

The SiC devices GeneSiC is developing serve a variety of energy storage, power grid, and military applications, which are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

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