Jozsef Gyulai

Ordinary Member of the Hungarian Academy of Sciences,
Chairman, Engineering Science Section, Hungarian Academy of Sciences;
“Professor Emeritus Instituti” at Research Institute for Technical Physics and Materials Science (MFA), Hungarian Academy of Sciences;
Professor of Physics, University of Technology and Economy, Budapest;
Private Expert, EU FP7 NMP Committee;
Executive Committee member E-MRS

Homepage: http://people.mfa.kfki.hu/gyulai/
Address: MFA, Konkoly Thege 29-33, H-1121 Budapest, Hungary
Home address: Otthon str. 23/B, H-1118, Budapest, Hungary
Mail: MFA, P.O.Box 49, H-1525 Budapest, Hungary
Phone: +(36-1)392-2770, Fax: +(36-1)392-2226, Private: +(36-1-)209-3137, Mobile: +(36-30)940-3081
Born: August 21, 1933, Hodmezövasarhely, Hungary; citizenship: Hungarian, married, one daughter

Major fields, expertise
• Ion implantation, physics and technology of semiconductors and thin films,
• Surface layer analysis, ion beam analysis
• Phenomena and preparation of novel solid state structures, carbon nanotubes
• Nanosciences

Holder of different state and scientific honours
• “Fellow” European Physical Society,
• “Fellow” Institute of Physics (UK),
• Senior member, Institute of Electrical and Electronic Engineers,
• Past Vice-President, Intl. Union of Pure and Applied Physics, IUPAP,
• Materials Research Society, MRS., member1980

Longer term visiting scientist, principal investigator, advisor and professor (totalling over ten years):
• Caltech (USA);
• Cornell University (USA);
• GPS de l’CNRS at Univ. Paris VII (France);
• Lehrstuhl Elektronische Bauelemente, FA-Univ. Erlangen-Nürnberg and FhG-Institut für Integrierte Schaltungen, IIS-B (Germany);
• Inst. for Materials under Extreme Conditions, Osaka University (Japan).

Publications: Authored and co-authored over 300 technical papers, gave over 30 invited talks, 13 books and book chapters, over 10 patents. Number of known (non-self) references: over 3000. Chair of over ten international conferences, symposia, tutor of over ten professional courses on ion implantation technology.

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